smd type diodes 1 features for surface mounted applications. low profile package. built-in strain relief. metal silicon junction, maj ority carrier conduction. low power loss, high efficiency. high current capability, low forward voltage drop. high surge capability. surface mount schottky barrier rectifiier KS22 thru ks26 1 2 4.597 3.988 5.283 4.775 2.896 2.489 1.575 1.397 3.93 3.73 2.38 2.18 5.49 5.29 1.47 1.67 1.524 0.762 0.203 0.051 0.305 0.152 recommended land pattern do-214ac(sma) unit: mm 1.981 2.438 absolute maximum ratings ta = 25 parameter symbol KS22 ks23 ks24 ks25 ks26 unit maximum repetitive peak reverse voltage v rrm 20 30 40 50 60 v maximum rms voltage v rms 14 21 28 35 42 v maximum dc blocking voltage v dc 20 30 40 50 60 v peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i (av) a maximum average forward rectified current at tl i fsm a maximum instantaneous forward voltage at 1.0a * 1 v f v typical thermal resistance r ja r jl /w operating junction temperature range t j storage temperature range t stg * 1. pulse test: 300ms pulse width, 1% duty cycle. 2 50 0.5 0.7 -65to+150 maximum dc reverse current * 1 t a =25 at rated dc blocking voltage t a =100 i r 0.4 ma 55 17 -65 to +125 -65 to +150 10 marking no. KS22 ks23 ks24 ks25 ks26 mariking ss22 ss23 ss24 ss25 ss26 www.kexin.com.cn
|
